Low turn-on voltage InP Schottky device and method

US6380552B2 · kind B2 · utility

Assignee

• HRL Laboratories, LLC · US

Inventors

• Adele Schmitz · Thousand Oaks, US
• Robert H. Walden · Newbury Park, US
• Mark Lui · Los Angeles, US
• Mark Yu · Taichung, TW

Key dates

• Filing date: May 28, 1999
• Grant date: Apr 30, 2002
• Expiry date: May 28, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/852

Abstract

A Schottky diode, and a method of making the same, which is fabricated on InP material and employs a Schottky layer including InxAl1−xAs with x>0.6, or else including a chirped graded supperlattice in which successive periods of the superlattice contain progressively less GaInAs and progressively more AlInAs, the increase in AlInAs being terminated before the proportion of AlInAs within the last period (adjacent the anode metal) exceeds 80%. Such fabrication creates an InP-based Schottky diode having a low turn-on voltage which may be predictably set within a range by adjusting the fabrication parameters.