Semiconductor device and method of fabricating the same
US6380558B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1999 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Dec 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6721
Abstract
In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.