Bidirectional switch with increased switching breakdown voltage
US6380565B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2000 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Aug 8, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/80
Abstract
A monolithic bidirectional switch formed in a semiconductor substrate of a first conductivity type having a front surface and a rear surface, including a first main vertical thyristor, the rear surface layer of which is of the second conductivity type, a second main vertical thyristor, the rear surface layer of which is of the first conductivity type. A structure for triggering each of the first and second main thyristors is arranged to face regions mutually distant from the two main thyristors, the neighboring portions of which correspond to a region for which, for the first main thyristor, a short-circuit area between cathode and cathode gate is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.