Thin film formed by inductively coupled plasma
US6380612B1 · kind B1 · utility
7Cited by
8References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2000 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Mar 1, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/914
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Silicon nitride is formed on a supporting substrate by chemical vapor deposition using an antenna outside a vacuum reaction chamber to apply RF power to form an inductively coupled plasma from a reactant gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.