Microcircuit assembly having dual-path grounding and negative self-bias
US6380623B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 15, 1999 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Oct 15, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/924
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microwave-frequency microcircuit assembly includes an integrated circuit structure having a circuit ground. A support structure includes a grounded metallic carrier, and a dielectric substrate having a top surface, a bottom surface contacting the carrier, and a capacitor via extending through the dielectric substrate. A metallization on the top surface of the substrate includes an input metallization trace to the integrated circuit structure, an output metallization trace from the integrated circuit structure, and a substrate ground plane upon which the integrated circuit structure is affixed. A thin-film capacitor resides in the capacitor via and is electrically connected between the substrate ground plane and the carrier. An electrical resistor is connected between the circuit ground of the integrated circuit structure and the carrier to self-bias the integrated circuit structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.