Very high voltage switch
US6380793B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2000 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Oct 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/6871
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A push-pull switch including a first N-channel MOS transistor, the drain-source path of which is connected between a high voltage terminal and an output terminal, a first resistor connected between the gate of the first transistor and the high voltage, a diode having its anode connected to the output terminal and its cathode connected to the gate of the first transistor, a second N-channel MOS transistor having its drain connected to the cathode of the diode, its source connected to a reference potential, and its gate connected to a control terminal, and a second resistor connected between the gate of the second transistor and the output terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.