Semiconductor device with repair fuses and laser trimming method used therefor
US6380838B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 7, 2000 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Oct 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with repair fuses is provided, which decrease the fuse pitch and the fuse occupation area without short circuit among the adjoining repair fuses and damage to the semiconductor device itself. The device comprises (a) a semiconductor substrate; (b) elongated repair fuses having an equal width b formed on the substrate; the fuses being arranged in substantially parallel to each other at a pitch a; (c) a layer formed to cover the fuses; the layer having an opening that exposes the fuses and that allows the fuses to receive a laser beam from the outside; the beam having a placement tolerance h for each fuse; the beam being designed to form an irradiation area with a diameter d for each fuse in the opening; the irradiation area for each fuse being arranged along a virtual zigzag shape in the opening; and (d) a relationship of is established. Preferably, each fuse has a reference point at a middle point of its exposed part from the opening. Each area is located in such a way that a center of the area has an offset distance e from the reference point of the corresponding fuse. The offset distance e satisfies the relationship of 2e≧{square root over (d2+L −a…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.