Hybrid dual spin valve sensor and method for making same
US6381105B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1999 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Oct 22, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3967
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A hybrid dual spin valve sensor includes a standard spin valve sharing a common free layer with a synthetic spin valve. The standard spin valve consists of a first antiferromagnetic layer having a first blocking temperature, a first soft ferromagnetic layer, a first spacer layer, and the common free layer. The synthetic spin valve consists of the common free layer, a second spacer, a second soft ferromagnetic layer, a third spacer layer, a third soft ferromagnetic layer, and a second antiferromagnetic layer having a second blocking temperature. Each of the two antiferromagnetic layers has a fixed magnetization orientation antiparallel to the other. A lead set configured to pass a sensing current from a current source through the hybrid dual spin valve, and a sensing circuit configured to measure changes in resistance within the hybrid dual spin valve, complete the sensor. A method for producing a hybrid dual spin valve sensor includes providing such a sensor wherein the magnetization orientations of the two antiferromagnetic layers are disordered, followed by processing at a first temperature and a second temperature. Processing at the first temperature is used to set the magnetiza…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.