Semiconductor bulk acoustic resonator with suppressed lateral modes
US6381820B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1999 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Sep 28, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor bulk acoustic resonator (SBAR) with improved passband insertion loss and phase performance characteristics making it suitable for use in a wider variety of narrowband filtering applications. The SBAR is configured to suppress lateral propagating acoustical wave mode. The lateral acoustical wave modes are controlled by varying the lateral dimension of the resonator electrodes and or utilizing a viscous acoustic damping material, such as a viscoelastic material, such as polyimide, along at least~a portion of the perimeter of the electrodes to attenuate reflections of the lateral acoustic modes at the electrode edges back into the electrode region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.