System and method for performing diffusion on a three-dimensional substrate
US6383287B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2000 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Sep 28, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system and method for performing diffusion on a three-dimensional substrate is provided. The system includes a furnace for providing a doped (e.g., p-type) molten semiconductor material and a dropper for converting the molten semiconductor material into a series of uniformly sized droplets. The droplets are then provided to a first tube where they solidify into a semiconductor crystals. The semiconductor crystals are then heated for a predetermined period of time until an outer layer of the semiconductor crystals is melted. The melted outer layer can then be doped (e.g., n-type) and then allowed to re-solidify. As a result, a plurality of spherical shaped p-n devices is created.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.