Method for forming a zinc oxide layer and method for producing a photovoltaic device
US6383359B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2001 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Apr 3, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are a substrate with a zinc oxide layer, in which at least a zinc oxide layer is provided on a support substrate, wherein the zinc oxide layer comprises a zinc oxide layer having the c axis perpendicular to the support substrate and a zinc oxide layer having the c axis slantindicular to the support substrate in the order from the side of the support substrate; and a photovoltaic device in which a semiconductor layer is formed on the substrate with the zinc oxide layer. Thus provided is the inexpensive photovoltaic device with excellent reflective performance and optical confinement effect and with high photoelectric conversion efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.