Chemical vapor deposition precursors
US6383669B1 · kind B1 · utility
12Cited by
4References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1999 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Dec 1, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Zirconium precursors for use in depositing thin films of or containing zirconium oxide using an MOCVD technique have the following general formula: Zrx(OR)yL, wherein R is an alkyl group; L is a &bgr;-diketonate group; x=1 or 2; y=2, 4 or 6; and z=1 or 2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.