Attenuated phase-shift mask and method of manufacturing the same
US6383689B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 1999 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Dec 9, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/32
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a halftone phase shift mask including a mask substrate and a rectangular pattern having a side (L) formed on the substrate, which is defined within a large pattern which is transferred on a resist material formed on a semiconductor substrate, the rectangular pattern includes a plurality of first opaque patterns, each having a width (ML) equal to 1 to 1½ times the resolution limit of the resist material at least one transparent opening pattern, having a width (MS) less than half the resolution limit, and wherein the number (X) of the opaque patterns and transparent opening patterns is determined by a formula of:X=2P+1,whereP=ROUND UP ((L−ML)/(ML+MS)).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.