Method of fabricating semiconductor device
US6383853B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 6, 2001 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Mar 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28581
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device, capable of forming a pattern more finely and more variously without depending on the performance of an exposing device. Aluminum is vapor deposited on a spacer film from an oblique direction to form a metal film etching guard. Specifically, Al is vapor deposited from a direction inclined from the direction of the normal line of the surface of the spacer film by 85° (angle of vapor deposition). For example, when the depth of a recess is 0.10 &mgr;m and the opening width is 0.4 &mgr;m, Al is not vapor deposited on the bottom surface of the recess. After performing anisotropic etching on the spacer film by using the metal film etching guard as a mask, the metal film etching guard is removed. A gate electrode is formed in the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.