Method of anisotropic etching of substrates
US6383938B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 1999 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Apr 21, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30655
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of plasma etching of silicon that utilizes the plasma to provide laterally defined recess structures through a mask. The method is based on the variation of the plasma parameters to provide a well-controlled anisotropic etch, while achieving a very high etch rate, and a high selectivity with respect to a mask. A mixed gas is introduced into the vacuum chamber after the chamber is evacuated, and plasma is generated within the chamber. The substrate's surface is exposed to the plasma. Power sources are used for formation of the plasma discharge. An integrated control system is used to modulate the plasma discharge power and substrate polarization voltage levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.