Photovoltaic device
US6384316B1 · kind B1 · utility
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9Claims
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Key dates
| Filing date | Aug 17, 2000 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Aug 17, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A photovoltaic device having a structure in which a transparent conductive film, a p-type amorphous silicon layer, an i-type amorphous silicon layer, an n-type microcrystalline silicon layer and a back electrode film are laminated on a transparent substrate so as to satisfy the conditions of50 å<dc1<da1×&agr;1  (1)and0.124<&agr;1<0.130  (2),whereda1 is the total thickness (å) of the p-type amorphous silicon layer and i-type amorphous silicon layer, anddc1 is the thickness (å) of the n-type microcrystalline silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.