Photoelectric transducer and solid-state image sensing device using the same
US6384436B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 1999 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Dec 2, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
Disclosed is a photoelectric transducer having a photodiode that is formed on a second-conductivity-type well and is composed of a first-conductivity-type region to accumulate signal charge when light is supplied and a first second-conductivity-type region formed on the first-conductivity-type region. The first second-conductivity-type region is separated from a second-conductivity-type device separation region and is connected to the second-conductivity-type device separation region at part of the circumference of the first second-conductivity-type region through a second second-conductivity-type region that is formed to be at least partially shallower than the first second-conductivity-type region. Also, disclosed is a solid-state image sensing device equipped with the photoelectric transducer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.