Micro-dynode integrated electron multiplier
US6384519B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1997 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Oct 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J43/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A microdynode electron multiplier provides numerous microchannels extending parallel to one another through a layered structure incorporating insulating spacer layers and dynode layers which either incorporate a conductive electrode layer or are contiguous with a conductive electrode layer. The dynode layers include materials with high electron emissivity. The dynode layers can be biased to different electrical potentials to provide a potential gradient along the length of each microchannel. Multi-stage electron multiplication provides high gain. The device desirably is formed as a monolithic, sealed structure with a cathode structure such as a photocathode and an anode structure. The device can provide a multi pixel imaging device of extremely high sensitivity and resolution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.