Magnetic field sensor comprising a spin tunneling junction element
US6384600B1 · kind B1 · utility
13Cited by
3References
35Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 12, 1999 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Aug 12, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1129
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A strongly miniaturizable magnetic field sensor is based on four spin tunnel junctions, together forming a Wheatstone bridge. The magnetically sensitive electrode functions as well as a laminated flux concentrator, resulting in a low noise single domain configuration, and allowing for magnetization flipping for offset correction. The very simple design also allows easy definition of the fixed magnetization direction of the counter electrode. Very high output voltage combined with very low power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.