Complementary metal oxide semiconductor class AB amplifier
US6384685B1 · kind B1 · utility
18Cited by
4References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 28, 2001 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Jun 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/3023
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A CMOS class AB amplifier has an adaptive level shift circuit, a compensated capacitor, and an output transistor pair. The adaptive level shift circuit includes a current mirror circuit, a diode transistor, a switch transistor, and a current source transistor. The diode transistor is utilized as a bias for driving the switch transistor so as to provide a relatively low linear resistor for being used as a feedback. Therefore, the Q (quality factor) value of the gyration inductance can be effectively reduced and the occurrence of the peak gain can be suppressed effectively, so as to maintain a desired gain margin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.