Silicon based substrate with environmental/thermal barrier layer

US6387456B1 · kind B1 · utility

Assignees

• General Electric Company · US
• UNITED TECHNOLOGIES CORPORATION · US
• The United States of America as represented by the Administrator of the National Aeronautics and Space Administration · US

Inventors

• Harry E. Eaton · Woodstock, US
• William Allen · Portland, US
• Nathan S. Jacobson · Westlake, US
• Narottam P. Bansal · North Olmsted, US
• Elizabeth J. Opila · Lakewood, US
• James L. Smialek · Strongsville, US
• Kang N. Lee · Zionsville, US
• Irene Spitsberg · Loveland, US
• Hongyu Wang · Northville, US
• Peter Joel Meschter · Niskayuna, US
• Krishan Lal Luthra · Niskayuna, US

Key dates

• Filing date: Sep 5, 2000
• Grant date: May 14, 2002
• Expiry date: Sep 5, 2020

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C28/042
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a barium-strontium alumino silicate.