Reduced surface charging in silicon-based devices
US6387723B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2001 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Jan 19, 2021 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B7/0012
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of treating silicon-based surfaces for reducing charge migration is disclosed. In accordance with the method, a silicon-based surface is treated with Nitrogen-rich pacifying gas environment, after the surface is actuated. The surface is actuated in a drying step, wherein residual water or moisture is removed from the surfaces at an elevated temperature and a reduced pressure. The method of the instant invention is particularly useful for the treatment of ribbon surfaces in grating light valve device, wherein after the ribbon surfaces are treated according to the current invention, surface charging remains low for several days, even in open air conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.