Method of fabricating semiconductor laser diode
US6387746B2 · kind B2 · utility
0Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2001 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Mar 5, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2272
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask layer is formed on a semiconductor substrate such that an elongate opening of the mask layer extends lengthwise at an angle relative to a [011] direction of the semiconductor substrate. A ridge waveguide structure including an active layer is formed within the elongate opening on the semiconductor substrate by a selective growth method using the mask layer as a mask. The mask layer is then removed, and a clad layer is formed over the ridge waveguide structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.