Method of producing a schottky varicap
US6387769B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2001 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Mar 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/617
Abstract
A method of producing a Schottky varicap (25) including:(a) providing an epitaxial layer (12) on a semiconductor substrate (1);(b) providing an insulating layer including an oxide layer and a nitride layer on a predetermined area of the surface of the epitaxial layer (12);(c) depositing a polysilicon layer (6);(d) applying a first high temperature step to diffuse a guard ring (10) around the first predetermined area;(e) removing a predetermined portion of the polysilicon layer (6) to expose the first silicon nitride film (5);(f) implanting atoms through at least the first oxide film (4) to provide a predetermined varicap doping profile;(g) applying a second high temperature step to anneal and activate the varicap doping profile;(h) removing the first oxide film (4) to provide an exposed area;(i) providing a Schottky electrode (17) on the exposed area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.