Thin-film capacitors and methods for forming the same
US6387770B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 30, 2001 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Jan 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved thin-film capacitor and methods for forming the same on a surface of a substrate are disclosed. The capacitor includes a bottom conducting plate formed by depositing conductive material within a trench of an insulating layer and planarizing the conducting and insulating layers. A dielectric film is then deposited on the substrate surface, such that at least a portion of the dielectric material remains over the bottom conducting plate. A second conductive layer is then deposited over the surface of the substrate, patterned and etched such that at least a portion of the second conducting material resides over at least a portion of the dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.