Electron emission device with electron supply layer having reduced resistance
US6388376B1 · kind B1 · utility
19Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 1999 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Aug 5, 2019 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron emission device comprises an electron-supply layer made of metal or semiconductor and disposed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron-supply layer is essentially composed of elements belonging to group IV and contains an additive of at least one material selected from atomic elements belonging to group III or V.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.