Insulative film for thin film structures
US6388378B1 · kind B1 · utility
11Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 15, 1999 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Jul 15, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/365
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention concerns an insulating film of a thin film structure deposited on an essentially alkali metal-free glass substrate, comprising alternating layers of aluminium oxide and titanium oxide and thin film electriluminescent device wherein said insulating film is incorporated as an insulating layer between the phosphor layer and the electrode layers. In the insulating film, the ratio between the cumulative thicknesses of said titanium oxide and said aluminium oxide is less than 0.75, and due to the ratio lower than that of prior art, good resistance against cracking of the film is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.