Semiconductor memory and method of operating semiconductor memory
US6388922B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2000 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Jun 9, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6894
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory capable of attaining a long life, a low voltage, a high-speed operation, low power consumption and high integration is provided. The semiconductor memory comprises a control gate electrode, a floating gate electrode, a semiconductor region, a first insulator film formed on one surface of the semiconductor region and a second insulator film formed on another surface of the semiconductor region. A prescribed voltage is applied to the control gate electrode or a drain region thereby injecting carriers from the control gate electrode or the drain region into the floating gate electrode through the first insulator film, the semiconductor region and the second insulator film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.