Methods and apparatus for forming submicron patterns on films
US6391217B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 22, 2000 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Dec 22, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24521
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for forming a patterned film on a substrate, the method including: providing a first flowable medium on the substrate and a second flowable medium on the first flowable medium, the first and second flowable media having different dielectric properties and defining an interface there between; applying an electric field to the interface for a time sufficient to produce a structure in the first flowable medium along the interface; and hardening the structure in the first flowable medium to form the patterned film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.