Method for making field-structured memory materials
US6391393B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2001 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Feb 22, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08F2/44
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A method of forming a dual-level memory material using field structured materials. The field structured materials are formed from a dispersion of ferromagnetic particles in a polymerizable liquid medium, such as a urethane acrylate-based photopolymer, which are applied as a film to a support and then exposed in selected portions of the film to an applied magnetic or electric field. The field can be applied either uniaxially or biaxially at field strengths up to 150 G or higher to form the field structured materials. After polymerizing the field-structure materials, a magnetic field can be applied to selected portions of the polymerized field-structured material to yield a dual-level memory material on the support, wherein the dual-level memory material supports read-and-write binary data memory and write once, read many memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.