Method of fabricating a polysilicon layer
US6391395B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2000 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Dec 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6723
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a method of forming a polysilicon layer. A light shield layer having a super-resolution near-field structure is arranged on an amorphous silicon layer. The super-resolution near-field structure includes a first dielectric layer, a second dielectric layer, and an active layer between the first dielectric layer and the second dielectric layer. The light shield layer is irradiated by a laser beam having a first intensity to generate a transmitted laser beam having a second intensity. The second intensity is greater than the first intensity. An annealing process is performed to irradiate the amorphous silicon layer with the transmitted laser beam having a second intensity thereby converting the amorphous silicon layer into a polysilicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.