Cu plated ceramic substrate and a method of manufacturing the same
US6391473B2 · kind B2 · utility
12Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2001 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Apr 11, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12944
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A Cu plated ceramic substrate is used in a semiconductor. On a ceramic substrate layer, a thin-film Cr layer is put, and a thin-firm Au layer is put on the Cr layer. The Au layer is plated with Cu. By providing the Au and Cr layers between the ceramic plate and Cu layer, adhesibility is increased. A Pertier element which includes the Cu plated ceramic layer is employed in a semiconductor to absorb and generate heat efficiently.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.