Methods for fabricating ferroelectric memory devices using pulsed-power plasma
US6391659B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2000 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | May 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method for fabricating a ferroelectric memory device, which can prevent the deterioration of the ferroelectric characteristics from etching damage generated during etching process of the interlayer-insulating layer formed over the capacitor to form a contact hole. The present invention is characterized by etching the interlayer-insulating layer with the use of time-modulated plasma, namely pulsed-power plasma. Accordingly, the present invention can prevent the deterioration of the ferroelectric characteristics from etching, omit or reduce the later separate thermal process for recovering the etching damage and enhance the reliability of device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.