Semiconductor and method of fabricating
US6391661B2 · kind B2 · utility
0Cited by
14References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2001 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Feb 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor structure that comprises a substrate; a conductor; and insulating layer separating the conductor from the substrate; and a removable conductive strap coupled to the conductor and the substrate for maintaining a common voltage between the conductor and substrate during ion beam and/or plasma processing; and a method for fabricating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.