Method for making polysilicon thin film transistor having multiple gate electrodes
US6391693B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Aug 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6733
Abstract
Disclosed is a polysilicon thin film transistor capable of reducing leakage current in the off state and method for manufacturing the same. The polysilicon thin film transistor comprises a substrate; at least two gate electrodes formed on the substrate; an insulating layer coated on the gate electrodes; a channel layer formed on the gate insulating layer to cover the entire gate electrodes and made of polysilicon; an ion stopper formed on the channel layer corresponding to the gate electrode; impurity regions formed on the channel layer at both sides of the ion stopper; and source and drain electrodes contacted with outermost regions among the impurity regions respectively, wherein the outermost impurity regions are source and drain regions and the region between the gate electrodes is an auxiliary junction region for compensating ON current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.