Method for forming polycrystalline silicon film
US6391747B1 · kind B1 · utility
15Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2000 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Feb 7, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02672
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for forming a polycrystalline silicon (poly-Si) thin film on an inexpensive glass substrate, a cap film doped with a catalyst element is provided on an amorphous silicon (a-Si) film formed on the substrate. The a-Si film is transformed into the poly-Si film by irradiating an excimer laser beam on the a-Si film through the cap film. Thereafter, the cap film is removed from the poly-Si film together with the catalyst element precipitated therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.