Method for patterning a substrate with photoresist
US6391800B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1999 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Nov 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02118
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for patterning a substrate having a surface with high aspect ratio topography with a photoresist is described. Specifically the surface of a semiconductor substrate is pre-wetted with a solvent solution to form a liquid solvent film. An additional amount of the solvent solution is added to form a solvent puddle on the liquid solvent film. Photoresist is dispensed onto the solvent puddle for a sufficient time and in a sufficient amount to allow diffusion of the photoresist and the solvent puddle into the openings defined in the topography of the substrate. The solvent solution in and on the surface of the openings defined in the substrate from the pre-wetting step is replaced with the photoresist by facilitating diffusion of the photoresist into the topography openings. A photoresist layer is then cast in a predetermined thickness on the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.