Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
US6391803B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2001 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Jun 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An atomic layer deposition method of forming a solid thin film layer containing silicon. A substrate is loaded into a chamber. A first portion of a first reactant is chemisorbed onto the substrate, and a second portion of the first reactant is physisorbed onto the substrate. The physisorbed portion is purged from the substrate and the chamber. A second reactant is injected into the chamber. A first portion is chemically reacted with the chemisorbed first reactant to form a silicon-containing solid on the substrate. The first reactant is preferably Si[N(CH3)2]4, SiH[N(CH3)2]3, SiH2[N(CH3)2]2 or SiH3[N(CH3)2]. The second reactant is preferably activated NH3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.