Semiconductor device
US6392265B1 · kind B1 · utility
7Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2001 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Jan 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
The semiconductor device comprises a first electrode 36, a ferroelectric film 38 formed on the first electrode, and a second electrode 46 formed on the ferroelectric film. The first electrode or the second electrode comprises SrRuOx films 30, 40 with Pb and/or Bi added. Pb and Bi are added to the SRO film, whereby the diffusion of the Pb and Bi contained in the ferroelectric film into the SRO film are suppressed, which leads to an improvement of capacitor ferroelectric properties. Thus, the semiconductor device can realize low-voltage operation and hydrogen deterioration resistance by using the SRO film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.