Fet having a reliable gate electrode
US6392278B1 · kind B1 · utility
15Cited by
15References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 26, 2000 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Jun 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
Abstract
A comb-shape MESFET has a gate electrode having a plurality of gate fingers coupled to a gate bar at the proximal ends of the gate fingers. The distal end of each gate finger is formed as a large width end on the inactive region of the wafer. The large width end prevents peel-off of the gate finger from the semiconductor layer, thereby improving reliability of the structure of the comb-shape MESFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.