Method and apparatus for removing native oxide layers from silicon wafers
US6395192B1 · kind B1 · utility
10Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 26, 1999 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | May 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for selectively removing a native oxide layer from a silicon wafer without significantly affecting the underlying silicon or other materials that may be thereon, by exposing the silicon wafer to an etchant gas including NF3 while simultaneously exposing the wafer to ultraviolet radiation, and heating the wafer to a temperature of 100-400° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.