Production process and apparatus for high purity silicon
US6395249B1 · kind B1 · utility
8Cited by
8References
18Claims
0Family size
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Key dates
| Filing date | Jun 23, 2000 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | Jun 23, 2020 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J2219/00184
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
It is possible to produce high purity Si by heating solid SiO at a temperature of at least 1000° C. and lower than 1730° C., for a disproportionation reaction in which the SiO solid is decomposed to liquid or solid Si and solid SiO2, and the produced Si is separated from the SiO2 and/or SiO. The SiO solid can be obtained by a process whereby a starting mixture of carbon C, silicon Si or ferrosilicon, or a combination thereof, with SiO2 is heated to generate SiO gas-containing gas, and the SiO-containing gas is cooled to produce SiO solid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.