Method of producing semiconductor light-emitting element
US6395572B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2000 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | Mar 3, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
Abstract
Semiconductor light-emitting elements are produced by providing a wafer substrate of GaP, epitaxially growing on this substrate a semiconductor layered structure including an n-type layer and a p-type layer of GaP for providing a light-emitting layer, forming top electrodes on the semiconductor layered structure each over a portion of the area corresponding to one of the chips into which the substrate is to be later divided, forming a bottom electrode on the bottom surface of the substrate, dicing the wafer substrate into the individual chips, and thereafter carrying out a surface-roughening process on externally exposed portions of the semiconductor structure by means of hydrochloric acid. Each of the top electrodes is of a three-layer structure with a contact metal layer which may be of an alloy of Au and makes an ohmic contact with the GaP of the semiconductor layered structure, a Mo layer on the contact metal layer and an Au layer on the Mo layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.