Methods for forming metal oxide layers with enhanced purity
US6395650B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2000 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | Oct 23, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02192
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Within: (1) a method for purifying a metal oxide layer; and (2) a method for forming with enhanced purity a metal oxide layer, there is employed an irradiation of either: (1) a metal oxide layer; or (2) a substrate in the presence of at least one of an oxidant and a metal source material, such as to either: (1) reduce a concentration of a contaminant material within a metal oxide base material from which is formed a metal oxide layer; or (2) inhibit in a first instance formation of a contaminant material within a metal oxide layer. The metal oxide layer having incorporated therein the reduced concentration of contaminant material is particularly useful as a capacitive dielectric layer within a capacitive device within a microelectronic fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.