Semiconductor device provided with conductive layer and liquid crystal display
US6396077B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 20, 2000 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | Nov 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device and a liquid crystal display stabilizing the threshold voltage of a thin-film field effect transistor while enhancing durability and reliability of a capacitor having as a component a conductive layer formed in the same layer as the channel region of the thin-film field effect transistor. The semiconductor device includes a thin-film field effect transistor and a conductive layer. It includes a substrate, semiconductor layers, conductive layer, and a dielectric film. Semiconductor layers include channel regions of thin-film field effect transistors on the substrate. A conductive layer is formed on substrate in the same layer as semiconductor layers. A dielectric film is formed on conductive layer. The impurity concentration of channel regions is at most 1016 atoms/cm3. The impurity concentration of dielectric film is at most 1017 atoms/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.