Oriented rhombohedral composition of PbZr1-xTixO3 thin films for low voltage operation ferroelectric RAM
US6396094B1 · kind B1 · utility
6Cited by
5References
18Claims
0Family size
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Key dates
| Filing date | May 12, 2000 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | May 12, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A means to minimize physical distortion and modifications in the electrical properties of ferroelectric films incorporated into semiconductor devices is proposed. By introducing crystallographic texture into these ferroelectric films, the piezoelectric coefficient of the material can be minimized, reducing the interaction between a voltage across and mechanical stress on the film. In addition to having low piezoelectric coefficients, rhombohedral lead zirconate titanate films oriented along (111) exhibit low coercive fields and high remnant polarization, increasing their usefulness in layered semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.