Semiconductor device with metal-oxide conductors
US6396147B1 · kind B1 · utility
42Cited by
21References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 14, 1999 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | May 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Anodic oxidation is conducted without forming a voltage supplying line for anodic oxidation.A second wiring layer comprising aluminum is formed as separated for each wiring, and electrically forms a short circuit by a metallic film comprising tantalum. The second wiring layer is subjected to anodic oxidation by applying a voltage to the first metallic film, and an anodic oxide film (alumina film) is formed on the surface thereof. A first wiring layer is formed by etching an anodic oxide with the anodic oxide as a mask, to complete wiring comprising wiring layers and laminated to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.