Deposited film forming system and process
US6397775B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 1999 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Oct 15, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32532
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a deposited film forming system having at least a vacuum vessel, means for feeding a film-forming material gas into the vacuum vessel, a discharge electrode provided inside the vacuum vessel, used to make the material gas into a plasma, and a power supply conductor for applying a high-frequency power to the discharge electrode, the system comprises an earth shield so disposed as to surround the power supply conductor inside the vacuum vessel, and a plurality of dielectric materials at least part of which is disposed between the power supply conductor and the earth shield. A process carried out using the deposited film forming system is also disclosed. The system and process can maintain large-area and uniform discharge for a long time and can form deposited films having a high quality and a superior uniformity, on a beltlike substrate that moves continuously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.