Process for producing a porous layer by an electrochemical etching process

US6398943B1 · kind B1 · utility

Assignee

• Forschungszentrum Jülich GmbH · DE

Inventors

• Rüdiger Arens-Fischer · Aachen, DE
• Michael Berger · Bad Vilbel, DE
• Michael Kruger · Aachen, DE
• Markus Thonissen · Nettetal, DE
• Hans Luth · Aachen, DE

Key dates

• Filing date: Jun 14, 2000
• Grant date: Jun 4, 2002
• Expiry date: Jun 14, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/321
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A porous layer produced from silicon, germanium or aluminum by applying a wedge-shaped mask to the surface of the layer and by controlled elecrochemical etching along the mask.