Method of fabricating a semiconductor mesa device
US6399403B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 1999 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Aug 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention is a method of fabricating a semiconductor device involving selectively etching at least a first semiconductor layer on a semiconductor wafer so as to perform a lateral taper etch in said layer, forming a second layer over the resulting etched region so as to planarize the etched area, and subsequently performing a second etch over a portion of the etched region so as to form a mesa geometry. This material allows device fabrication with a lateral taper, beneficial to monolithic integration of devices, such as expanded beam lasers, while reducing or eliminating unwanted increases in mesa width (mesa bulge) resulting from the lateral taper.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.